Quantitative microwave evanescent microscopy

被引：49

作者：

Gao, C ^{[1
]}

Duewer, F ^{[1
]}

Xiang, XD ^{[1
]}

机构：

[1] Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 19期

关键词：

D O I：

10.1063/1.125216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a scanning evanescent microwave microscope with shielded tip geometry allowing quantitative characterization of the electrical impedance of insulating and conducting materials. By modeling the tip-sample capacitance, quantitative estimates of the sample (both dielectric and conducting) electrical impedance (real and imaginary) and tip-sample separation can be made. Measurements of the tip-sample capacitance versus tip-sample separation have been made and agree with estimated values. Also, the slope of the tip-sample capacitance with respect to the tip-sample distance is calculated to implement tip-sample distance regulation for dielectric materials. (C) 1999 American Institute of Physics. [S0003-6951(99)04245-X].

引用

页码：3005 / 3007

页数：3

共 16 条

[1] SUPER-RESOLUTION APERTURE SCANNING MICROSCOPE [J].