Effects of RF power on plasma phase reactions and film structure in deposition of a-C:H by styrene argon discharge

被引:14
作者
Lee, JH [1 ]
Kim, DS [1 ]
Lee, YH [1 ]
Farouk, B [1 ]
机构
[1] DREXEL UNIV,DEPT MECH ENGN,PHILADELPHIA,PA 19104
关键词
D O I
10.1149/1.1836658
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In ion-assisted plasma enhanced chemical vapor depositions (PECVD), the applied RF power affects both plasma phase reactions and deposited film structure. These dual effects are investigated in PECVD of a-C:H films by using styrene and Ar mixture. The films are deposited in a 13.56 MHz, RF driven asymmetric plasma reactor at 25 degrees C. In situ impedance analysis is used to estimate the ion energy and flux at the substrate, while an on-line mass spectrometer (MS) is used to analyze the plasma chemistry, and film structure is characterized by Fourier transform infrared (FTIR) spectroscopy and ellipsometry. The impedance analysis shows that both ion energy and ion flux increase with increasing RF power. The MS data show that the RF power has the major effect on the degree of dissociation of styrene. The FTIR spectra of the deposited films indicate that CH, is likely to be the precursor for the diamond-like carbon deposition. The ion energy flux (IEF) is shown to have a significant effect on the film structure. With increasing IEF, films show decreases in hydrogen concentration, increases in sp carbon fraction, and increases in refractive indexes.
引用
收藏
页码:1451 / 1458
页数:8
相关论文
共 41 条
[1]   THE ROLE OF ION-ASSISTED DEPOSITION IN THE FORMATION OF DIAMOND-LIKE CARBON-FILMS [J].
AISENBERG, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :2150-2154
[2]   LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].
ANGUS, JC ;
HAYMAN, CC .
SCIENCE, 1988, 241 (4868) :913-921
[3]   MASS AND OPTICAL-EMISSION SPECTROSCOPY OF PLASMAS FOR DIAMOND-SYNTHESIS [J].
BENNDORF, C ;
JOERIS, P ;
KROGER, R .
PURE AND APPLIED CHEMISTRY, 1994, 66 (06) :1195-1205
[4]  
BUURON AJM, 1995, J APPL PHYS, V78, P1
[5]  
CAREY FA, 1984, STRUCTURE MECHANISM, P10
[6]   ELECTRICAL CHARACTERISTICS AND GROWTH-KINETICS IN DISCHARGES USED FOR PLASMA DEPOSITION OF AMORPHOUS-CARBON [J].
CATHERINE, Y ;
COUDERC, P .
THIN SOLID FILMS, 1986, 144 (02) :265-280
[7]   MOLECULAR-ORBITALS AND CH3, CH2, AND CH DEFORMATION GROUP FREQUENCIES [J].
COLTHUP, NB .
APPLIED SPECTROSCOPY, 1980, 34 (01) :1-6
[8]  
COTTRELL TL, 1958, STRENGTHS CHEM BONDS, P160
[9]   STRUCTURE AND PHYSICAL-PROPERTIES OF PLASMA-GROWN AMORPHOUS HYDROGENATED CARBON-FILMS [J].
COUDERC, P ;
CATHERINE, Y .
THIN SOLID FILMS, 1987, 146 (01) :93-107
[10]   PLASMA PROCESSES IN METHANE DISCHARGES DURING RF PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF A-CH THIN-FILMS [J].
DEKEMPENEER, EHA ;
SMEETS, J ;
MENEVE, J ;
EERSELS, L ;
JACOBS, R .
THIN SOLID FILMS, 1994, 241 (1-2) :269-273