Solution-processed ambipolar vertical organic field effect transistor

被引：47

作者：

Ben-Sasson, Ariel J. ^{[1
,2
]}

Chen, Zhihua ^{[3
]}

Facchetti, Antonio ^{[3
]}

Tessler, Nir ^{[1
,2
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Sara & Moshe Zisapel Nanoelect Ctr, IL-32000 Haifa, Israel

[3] Polyera Corp, Skokie, IL 60077 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 26期

基金：

以色列科学基金会;

关键词：

CHARGE INJECTION; ELECTRON; TRANSPORT; POLYMER;

D O I：

10.1063/1.4731774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a solution-processed ambipolar patterned-electrode vertical organic field effect transistor (PE-VOFET) based on the P(NDI2OD-T2) polymer. The Schottky barrier-based VOFET operation uniquely facilitates an ambipolar transport using a single anode-cathode-electrode and a single semiconductor material. Pin-hole free sub-100 nanometer channel length devices are obtained with no high resolution patterning owing to both the polymer's smooth morphology and the underlining patterned-electrode's flatness. The VOFET exhibits n-type on/off ratio >10(3), current density >50 [mAcm(-2)] under V-DS = 5V, as well as p-type operation. Prone to design and optimization, the ambipolar PE-VOFET is a promising platform for organic complementary circuit technology. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4731774]

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页数：4

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