Thermal Impact on the Activation of Resistive Switch in Silicon Oxide Based RRAM

被引：6

作者：

Chen, Yu-Ting ^{[1
]}

Chang, Ting-Chang ^{[1
,2
,3
,4
]}

Huang, Jheng-Jie ^{[2
,3
]}

Tseng, Hsueh-Chih ^{[2
,3
]}

Yang, Po-Chun ^{[1
]}

Chu, Ann-Kuo ^{[1
]}

Yang, Jyun-Bao ^{[1
]}

Tsai, Ming-Jinn ^{[5
]}

Wang, Ying-Lang ^{[6
]}

Sze, Simon M. ^{[2
,3
,7
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[5] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu 310, Taiwan

[6] Taiwan Semicond Mfg Co, Hsinchu, Taiwan

[7] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

ECS SOLID STATE LETTERS | 2012年 / 1卷 / 04期

关键词：

BREAKDOWN;

D O I：

10.1149/2.008203ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this letter, the relation between the thickness of SiO2 and the behavior of forming process has been investigated. During room temperature forming process, the resistive switching (RS) behavior was activated in the thin SiO2 (12 nm), but failed in the thick SiO2 (23 nm). The behavior of activation failure is attributed to the reformed SiOx layer due to the unexpected recombination of excessive oxygen ions and oxygen vacancies near the TiN/SiO2 interface. However, RS behavior can be presented successfully owing to the enhancement of driving ability of oxygen ions into TiN by employing high temperature forming process. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.008203ssl] All rights reserved.

引用

页码：P57 / P59

页数：3

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