Improvement of Memory State Misidentification Caused by Trap-Assisted GIDL Current in a SONOS-TFT Memory Device

被引：15

作者：

Chen, Te-Chih ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Jian, Fu-Yen ^{[3
]}

Chen, Shih-Ching ^{[1
]}

Lin, Chia-Sheng ^{[4
]}

Lee, Ming-Hsien ^{[5
]}

Chen, Jim-Shone ^{[5
]}

Shih, Ching-Chieh ^{[5
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Electopt Engn, Kaohsiung 80424, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan

[5] AU Optron Corp, Hsinchu 30078, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 08期

关键词：

Memories; thin film transistors; TECHNOLOGY;

D O I：

10.1109/LED.2009.2023827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter studies the nonvolatile memory characteristics of polycrystalline-silicon thin-film transistors with a silicon-oxide-nitride-oxide-silicon (SONOS) structure. As the device was programmed, significant trap-assisted gate-induced drain leakage current was observed due to the extra programmed electrons trapped in the nitride layer which lies above the gate-to-drain overlap region. In order to suppress the leakage current and thereby avoid signal misidentification, we utilized band-to-band hot hole injection into the nitride layer. Because the injected hot holes can remain in the nitride layer after repeated Fowler-Nordheim erase and program operations, this method can exhibit good sustainability in such a SONOS-TFT memory device.

引用

页码：834 / 836

页数：3

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