Work function determination of zinc oxide films

被引：112

作者：

Sundaram, KB

Khan, A

机构：

[1] Dept. of Elec. and Comp. Engineering, University of Central Florida, Orlando

[2] Sawtek Inc., Orlando

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 02期

关键词：

D O I：

10.1116/1.580502

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zinc oxide-silicon heterojunctions were fabricated using both n- and p-type silicon. The zinc oxide films were deposited by the magnetron sputtering process at various substrate temperatures to form these devices. The electrical properties of these devices were measured and the work function of the zinc oxide was evaluated from these properties. (C) 1997 American Vacuum Society.

引用

页码：428 / 430

页数：3

共 12 条

[1] OPTICAL AND ELECTRICAL-PROPERTIES OF ZNO FILMS PREPARED BY SPRAY PYROLYSIS FOR SOLAR-CELL APPLICATIONS
ARANOVICH, J
ORTIZ, A
BUBE, RH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04): : 994 - 1003
[2] RECENT DEVELOPMENTS IN THIN-FILM SOLAR-CELLS
DHERE, NG
[J]. THIN SOLID FILMS, 1990, 193 (1-2) : 757 - 768
[3] SURFACE POINT-DEFECTS AND SCHOTTKY-BARRIER FORMATION ON ZNO(1010)
GOPEL, W
BRILLSON, LJ
BRUCKER, CF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 894 - 898
[4] HICKERNELL FS, 1986, IEEE T SON ULTRASON, V32, P621
[5] DEPOSITION OF BORON DOPED ZINC-OXIDE FILMS AND THEIR ELECTRICAL AND OPTICAL-PROPERTIES
HU, JH
GORDON, RG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (07) : 2014 - 2022
[6] MANIV S, 1978, J APPL PHYS, V52, P2787
[7] EXPERIMENTAL-STUDY OF A ZNO MODULATOR USING GUIDED WAVE RESONANCE
PERSEGOL, D
PIC, E
PLANTIER, J
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2563 - 2565
[8] SCHOTTKY BARRIERS ON P-TYPE SILICON
SMITH, BL
RHODERICK, EH
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (01) : 71 - +
[9] ELECTROLESS NICKEL PLATING FOR MAKING OHMIC CONTACTS TO SILICON
SULLIVAN, MV
EIGLER, JH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) : 226 - 230
[10] Sze S.M., 1981, PHYS SEMICONDUCTOR D, P256

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