Observation of a cinnabar phase in GaAs at high pressure

被引：51

作者：

McMahon, MI ^{[1
]}

Nelmes, RJ ^{[1
]}

机构：

[1] UNIV EDINBURGH,DEPT PHYS & ASTRON,EDINBURGH EH9 3JZ,MIDLOTHIAN,SCOTLAND

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.78.3697

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A previously unidentified high-pressure phase of GaAs has been found on pressure decrease from GaAs-II. The new phase is hexagonal, with a fourfold coordinated cinnabar structure very similar to that of ZnTe-II. The phase first appears on download from GaAs-II at 11.9(1) GPa, coexists with GaAs-I below 11.2(3) GPa, and starts to transform to GaAs-I at 8.1(2) GPa. Although no evidence of the phase is seen on pressure increase, detailed comparisons with ZnTe suggest cinnabar GaAs is an equilibrium phase.

引用

页码：3697 / 3700

页数：4

共 19 条

[1]

Besson J.M., 1990, HIGH PRESS RES, V4, P312, DOI [10.1080/08957959008246106, DOI 10.1080/08957959008246106]

[2] HIGH-PRESSURE PHASE-TRANSITION AND PHASE-DIAGRAM OF GALLIUM-ARSENIDE [J].

BESSON, JM ;

ITIE, JP ;

POLIAN, A ;

WEILL, G ;

MANSOT, JL ;

GONZALEZ, J .

PHYSICAL REVIEW B, 1991, 44 (09) :4214-4234

[3]

FITCH AN, UNPUB

[4] PHASE-TRANSITIONS IN CDTE TO 5 GPA [J].

MCMAHON, MI ;

NELMES, RJ ;

WRIGHT, NG ;

ALLAN, DR .

PHYSICAL REVIEW B, 1993, 48 (22) :16246-16251

[5] New structural systematics in the II-VI, III-V, and group-IV semiconductors at high pressure [J].

McMahon, MI ;

Nelmes, RJ .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 198 (01) :389-402

[6] FIRST-PRINCIPLES PSEUDOPOTENTIAL STUDY OF THE PHASE-STABILITY OF THE III-V SEMICONDUCTORS GAAS AND ALAS [J].

MUJICA, A ;

NEEDS, RJ ;

MUNOZ, A .

PHYSICAL REVIEW B, 1995, 52 (12) :8881-8892

[7] The Cmcm structure as a stable phase of binary compounds: Application to GaAs-II [J].

Mujica, A ;

Needs, RJ .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (15) :L237-L243

[8] STRUCTURAL STUDIES OF II-VI SEMICONDUCTORS AT HIGH-PRESSURE [J].

NELMES, RJ ;

MCMAHON, MI ;

WRIGHT, NG ;

ALLAN, DR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1995, 56 (3-4) :545-549

[9] HIGH-PRESSURE POWDER DIFFRACTION ON SYNCHROTRON SOURCES [J].

NELMES, RJ ;

MCMAHON, MI .

JOURNAL OF SYNCHROTRON RADIATION, 1994, 1 :69-73

[10] STRUCTURAL STUDIES OF III-V AND GROUP-IV SEMICONDUCTORS AT HIGH-PRESSURE [J].

NELMES, RJ ;

MCMAHON, MI ;

WRIGHT, NG ;

ALLAN, DR ;

LIU, H ;

LOVEDAY, JS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1995, 56 (3-4) :539-543

← 1 2 →