Explosive vapor sensor using poly (3-hexylthiophene) and CuII tetraphenylporphyrin composite based organic field effect transistors

被引：36

作者：

Dudhe, Ravishankar S. ^{[1
]}

Tiwari, S. P. ^{[1
]}

Raval, Harshil N. ^{[1
]}

Khaderbad, Mrunal A. ^{[1
]}

Singh, Rahul ^{[1
]}

Sinha, Jasmine ^{[2
]}

Yedukondalu, M. ^{[2
]}

Ravikanth, M. ^{[2
]}

Kumar, Anil ^{[2
]}

Rao, V. Ramgopal ^{[1
]}

机构：

[1] Indian Inst Technol, Ctr Nanoelect, Dept Elect Engn, Bombay 400076, Maharashtra, India

[2] Indian Inst Technol, Dept Chem, Bombay 400076, Maharashtra, India

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 26期

关键词：

explosives; field effect transistors; Fourier transform spectra; gas sensors; infrared spectra; organic compounds; organic semiconductors;

D O I：

10.1063/1.3049130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Organic field effect transistors based on poly(3-hexylthiophene) and Cu-II tetraphenylporphyrin composite were investigated as sensors for detection of vapors of nitrobased explosive compounds, viz., 1,3,5-trinitro-1,3,5-triazacyclohexane (RDX), 2,4,6-trinitrotoluene (TNT), and dinitrobenzene, which are also strong oxidizing agents. Significant changes, suitable for sensor response, were observed in transistor "on" current (I-on) and conductance (S) after exposure. A similar device response was, however, not observed for oxidizing agents such as benzoquinone and benzophenone. The Fourier transform infrared spectrometry experiments supported the results, where exposure to RDX and TNT vapors resulted in a significant shift in IR peaks.

引用

页数：3

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