Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT's

被引：47

作者：

Richey, DM ^{[1
]}

Cressler, JD ^{[1
]}

Joseph, AJ ^{[1
]}

机构：

[1] AUBURN UNIV,DEPT ELECT ENGN,ALABAMA MICROELECT SCI & TECHNOL CTR,AUBURN,AL 36849

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 03期

关键词：

D O I：

10.1109/16.556153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The SiGe heterostructure device simulation tool SCORPIO is used to investigate profile optimization in SiGe HBT's for high-performance analog circuit applications. After calibrating SCORPIO to measured data, the effects of germanium profile shape on current gain, cut-off frequency, Early voltage and maximum oscillation frequency are compared over the temperature range of 200-360 K. The impact of aggressive base profile scaling on device performanare also investigated as a function of SiGe film stability.

引用

页码：431 / 440

页数：10

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