A capacitance standard based on counting electrons

被引：194

作者：

Keller, MW

Eichenberger, AL

Martinis, JM

Zimmerman, NM

机构：

[1] Natl Inst Stand & Technol, Boulder, CO 80303 USA

[2] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

来源：

SCIENCE | 1999年 / 285卷 / 5434期

关键词：

D O I：

10.1126/science.285.5434.1706

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A capacitance standard based directly on the definition of capacitance was built. Single-electron tunneling devices were used to place N electrons of charge e onto a cryogenic capacitor C, and the resulting voltage change Delta V was measured. Repeated measurements of C = Ne/Delta V with this method have a relative standard deviation of 0.3 X 10(-6). This standard offers a natural basis for capacitance analogous to the Josephson effect for voltage and the quantum Hall effect for resistance.

引用

页码：1706 / 1709

页数：4

共 12 条

[1]

CLOTHIER WK, 1965, METROLOGIA, V1, P36, DOI DOI 10.1088/0026-1394/1/2/002

[2] THE 1986 ADJUSTMENT OF THE FUNDAMENTAL PHYSICAL CONSTANTS [J].