Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures

被引：104

作者：

Perera, S. ^{[1
]}

Fickenscher, M. A. ^{[1
]}

Jackson, H. E. ^{[1
]}

Smith, L. M. ^{[1
]}

Yarrison-Rice, J. M. ^{[2
]}

Joyce, H. J. ^{[3
]}

Gao, Q. ^{[3
]}

Tan, H. H. ^{[3
]}

Jagadish, C. ^{[3
]}

Zhang, X. ^{[4
,5
]}

Zou, J. ^{[4
,5
]}

机构：

[1] Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA

[2] Miami Univ, Dept Phys, Oxford, OH 45056 USA

[3] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia

[4] Univ Queensland, Sch Engn, Brisbane, Qld 4072, Australia

[5] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 05期

基金：

澳大利亚研究理事会; 美国国家科学基金会;

关键词：

D O I：

10.1063/1.2967877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dynamics in GaAs/AlGaAs heterostructure nanowires grown with a recently developed technique which minimizes twinning. A thin capping layer is deposited to eliminate the possibility of oxidation of the AlGaAs shell as a source of oxygen defects in the GaAs core. We observe exciton lifetimes of similar to 1 ns, comparable to high quality two-dimensional double heterostructures. These GaAs nanowires allow one to observe state filling and many-body effects resulting from the increased carrier densities accessible with pulsed laser excitation.

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页数：3

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