Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process

被引:267
作者
Joyce, Hannah J. [1 ]
Gao, Qiang
Tan, H. Hoe
Jagadish, Chennupati
Kim, Yong
Zhang, Xin
Guo, Yanan
Zou, Jin
机构
[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia
[2] Dong A Univ, Dept Phys, Coll Nat Sci, Pusan 604714, South Korea
[3] Univ Queensland, Sch Engn, St Lucia, Qld 4072, Australia
[4] Univ Queensland, Ctr Microscopy & Microanal, St Lucia, Qld 4072, Australia
关键词
D O I
10.1021/nl062755v
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate vertically aligned epitaxial GaAs nanowires of excellent crystallographic quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. This is achieved by a two-temperature growth procedure, consisting of a brief initial high-temperature growth step followed by prolonged growth at a lower temperature. The initial high-temperature step is essential for obtaining straight, vertically aligned epitaxial nanowires on the (111)B GaAs substrate. The lower temperature employed for subsequent growth imparts superior nanowire morphology and crystallographic quality by minimizing radial growth and eliminating twinning defects. Photoluminescence measurements confirm the excellent optical quality of these two-temperature grown nanowires. Two mechanisms are proposed to explain the success of this two-temperature growth process, one involving Au nanoparticle-GaAs interface conditions and the other involving melting-solidification temperature hysteresis of the Au-Ga nanoparticle alloy.
引用
收藏
页码:921 / 926
页数:6
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