SUBPICOSECOND CARRIER LIFETIMES IN ARSENIC-ION-IMPLANTED GAAS

被引：70

作者：

GANIKHANOV, F ^{[1
]}

LIN, GR ^{[1
]}

CHEN, WC ^{[1
]}

CHANG, CS ^{[1
]}

PAN, CL ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTROOPT ENGN,HSINCHU 30050,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 23期

关键词：

D O I：

10.1063/1.115248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated photoexcited carrier lifetimes in arsenic-ion-implanted semi-insulating GaAs by time-resolved reflectivity measurements. Subpicosecond carrier lifetimes (220 to 550 fs) which do not exhibit apparent dosage dependence for samples bombarded with 200 keV arsenic ions at increasing dosages in the range of 10(12) and 10(16) ions/cm(2) are reported. The shortest carrier lifetime was observed for the sample irradiated at 10(13) ions/cm(-2). These are the shortest lifetimes ever observed for ion-damaged GaAs and comparable to those of low-temperature molecular beam epitaxially grown GaAs, which is also nonstoichiometric with excess-arsenic-related, deep-level defects. (C) 1995 American Institute of Physics.

引用

页码：3465 / 3467

页数：3

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