0.06μm gate length metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs with high fT and fMAX

被引：15

作者：

Bollaert, S ^{[1
]}

Cordier, Y ^{[1
]}

Zaknoune, M ^{[1
]}

Happy, H ^{[1
]}

Lepilliet, S ^{[1
]}

Cappy, A ^{[1
]}

机构：

[1] CNRS, Inst Elect & Microelect Nord, UMR 9929, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France

来源：

2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ICIPRM.2001.929090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

State-of-the art Metamorphic In(0.52)Al(0.48)AS/In0.53Ga0.47As HEMTs on GaAs substrate with 60 nanometer gate length is reported. The DC and microwave performance were investigated. Typical drain-to-source current Ids of 600 mA/mm and extrinsic transconductance of 850 mS/mm were obtained with our devices. Cutoff frequency f(T) and maximum oscillation frequency f(max) are 260 GHz and 490 GHz respectively. To our knowledge, these frequency performance are the highest ever reported for HEMTs on GaAs substrate.

引用

页码：192 / 195

页数：4

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