High fT 50-nm-gate lattice-matched InAlAs/InGaAs HEMTs

被引：28

作者：

Endoh, A ^{[1
]}

Yamashita, Y ^{[1
]}

Higashiwaki, M ^{[1
]}

Hikosaka, K ^{[1
]}

Mimura, T ^{[1
]}

Hiyamizu, S ^{[1
]}

Matsui, T ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICIPRM.2000.850238

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated 50-nm-gate lattice-matched InAlAs/InGaAs High Electron Mobility Transistors (HEMTs) using a conventional process under low temperatures below 300 degrees C, and measured DC and RF performance. The measured cutoff frequency f(T) of our 50-nm-gate HEMT is 362 GHz, which is much higher than those in previous works, and the highest value ever reported for any transistor. The excellent RF performance might result from the low-temperature fabrication process.

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页码：87 / 90

页数：4

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