Analytical method for two dimensional current crowding effect in magnetic tunnel junctions

被引：11

作者：

Chen, J

Li, Y

Nowak, J

de-Castro, JF

机构：

[1] Seagate Technol, Minneapolis, MN 55435 USA

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 10期

关键词：

D O I：

10.1063/1.1452654

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An analytical method was developed to compute the current crowding effect in two dimensions when the lead width and length are much larger than the tunnel junction radius. In a typical four-terminal geometry, current crowding gives rise to an extra lead resistance which can result in a larger measured resistance and lower tunneling magnetoresistance ratio than the intrinsic values of the magnetic tunnel junction. This extra lead resistance is approximately R(lead,4-terminal)similar to0.1x(R-sheet,R-Top+R-sheet,R-Bottom) x ln(lead-width/junction-radius), where R-sheet,R-Top/Bottom is the sheet resistance of the top/bottom lead. (C) 2002 American Institute of Physics.

引用

收藏

页码：8783 / 8785

页数：3

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