GaN and InGaN prepared by hot wall beam epitaxy

被引：3

作者：

Sakakibara, S

Tanoue, F

Ohbora, M

Kaneko, M

Nakayama, T

Ishino, K

Ishida, A

Fujiyasu, H

机构：

[1] YAMAHA, R&D Div, Elect Devices Grp, Toyooma, Shiga 4380192, Japan

[2] Shizuoka Univ, Fac Engn, Hamamatsu, Shizuoka 4328561, Japan

来源：

APPLIED SURFACE SCIENCE | 1999年 / 142卷 / 1-4期

关键词：

GaN; InGaN; hot wall epitaxy (HWE); GaN buffer layer; X-ray diffraction; photoluminescence (PL); electrical property;

D O I：

10.1016/S0169-4332(98)00884-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

GaN and InGaN epilayers were successfully obtained on nitrided Ga buffer layers predeposited on the sapphire (0001) substrate by Not Wall Beam Epitaxy (HWBE) using Ga and/or In metals, NH3 gas or RF plasma nitrogen source. For both films, the surface morphology was smooth and the PL spectra showed strong near-band-edge emission without deep level emission. For the InGaN films, the highest In mole fraction of 24% was obtained with the substrate temperature (T-sub) of 575 and the RF power of 500 W, which was estimated from the shift of X-ray diffraction peak. (C) 1999 published by Elsevier Science B.V. All rights reserved.

引用

页码：362 / 366

页数：5

共 11 条

[1]

AKASAKI I, 1995, JPN J APPL PHYS 2, V34, P1517

[2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].