CHARACTERISTICS OF CHLORINE-DOPED ZNSE FILMS AND ZNSE-ZNS SUPERLATTICES GROWN BY HOT-WALL EPITAXY

被引：7

作者：

SAKAKIBARA, S ^{[1
]}

FUJIMOTO, K ^{[1
]}

AMANO, N ^{[1
]}

ISHINO, K ^{[1
]}

ISHIDA, A ^{[1
]}

FUJIYASU, H ^{[1
]}

机构：

[1] SHIZUOKA UNIV, GRAD SCH ELECTR SCI & TECHNOL, HAMAMATSU, SHIZUOKA 432, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1994年 / 33卷 / 4A期

关键词：

II-VI-COMPOUND SEMICONDUCTOR; ZNSE FILM; N-TYPE DOPING; CHLORINE DOPING; N-TYPE CONDUCTIVITY; ZNSE-ZNS SUPERLATTICE; HOT WALL EPITAXY;

D O I：

10.1143/JJAP.33.2008

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chlorine-doped (Cl-doped) n-type ZnSe films were prepared on GaAs(100) substrates by hot wall epitaxy (HWE) using ZnCl2 as a doping source. The electron concentration could be controlled from 8.4 x 10(14) Cm-3 to 2.8 x 10(19) cm-3 by varying the ZnCl2 temperature. ZnSe films with an electron concentration above 10(19) CM-3, having a donor-bound excitonic photoluminescence emission (I2) without deep level emission were obtained for the first time. The activation energy of the chlorine donor was estimated to be 26.7 meV from the photon energy of I2. The existence of Cl in the films was confirmed by SIMS. Moreover, the Cl-doped ZnSe-ZnS superlattices with high electron concentration on the order of 10(17) cm-3 and excitonic PL emissions associated with the free exciton, were obtained for the first time.

引用

页码：2008 / 2014

页数：7

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