RHEED study of c(4x4)->(2x4) transition on GaAs(001) surface

被引：2

作者：

Alexeev, AN ^{[1
]}

Karpov, SY ^{[1
]}

Pogorelsky, YV ^{[1
]}

Sokolov, IA ^{[1
]}

机构：

[1] CTR ADV TECHNOL,ST PETERSBURG 194156,RUSSIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 166卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(96)00038-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new (2 x 1) surface structure was observed during the c(4 x 4) --> (2 x 4) transition while increasing the temperature in the range of 430-500 degrees C. Different models based on the electron stability criterion are proposed for this structure. Predictions made using these models are compared with experimental observations. The time-resolved study of c(4 x 4) --> (2 x 4) transition dynamics shows that 0.2 ML of gallium deposited on the surface induce this transition. This value is close to the gallium coverage theta(Ga) = 0.17 ML required for the electron stabilization of the surface completely filled by arsenic dimers.

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页码：72 / 77

页数：6

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