Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of AlInAsSb and AlInAsSb InGaAs multiple-quantum-well structures

AlInAsSb and Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As multiple-quantum-well (MQW) structures were grown by metalorganic vapor phase epitaxy. Silane (SM,) and dimethylzinc (DMZn) were used as n-type and p-type dopants, respectively. The electron concentration of the AlInAsSb bulk layer increases from 5.2 x 10(16) to 2.8 x 10(17) cm(-3) and the mobility decreases from 1204 to 703 cm(2)/V s with the flow rate of SiH4 increasing from 20 to 150 seem. The hole concentration of the ALInAsSb bulk layer increases from 2.06 x 10(15) to 5.8 x 10(17) cm(-3) and the mobility decreases from 284 to 120 cm(2)/V s with the flow rate of DMZn increasing from 20 to 200 seem. Double crystal X-ray diffraction, secondary ion mass spectrometry, and photoluminescence were used to characterize the MQW structures. (C) 1999 Elsevier Science B.V. All rights reserved.