NEGATIVE DIFFERENTIAL RESISTANCE OF STRAIN-FREE INGAAS/ALASSB RESONANT TUNNELING BARRIER STRUCTURES LATTICE-MATCHED TO INP

被引：13

作者：

INATA, T

MUTO, S

NAKATA, Y

FUJII, T

机构：

[1] Fujitsu Laboratories Ltd., Atsugi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 08期

关键词：

Molecular beam epitaxy; Negative differential resistance; Resonant tunneling barrier; Staggered lineup;

D O I：

10.1143/JJAP.29.L1382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We grew AlAsSb/InGaAs(4.40 nm) resonant tunneling barrier structures lattice-matched to InP substrates using molecular beam epitaxy. Peak-to-valley current ratios exceeding 10 at room temperature were achieved for the first time with fully lattice-matched resonant tunneling barrier structures (15 with a peak current density, Jp, of 2.37×103A/cm2and 11 with Jpof 1.51×104A/cm2). These values are comparable to peak-to-valley current ratios in InGaAs/AlAs pseudomorphic resonant tunneling barrier structures with corresponding peak current densities. © 1990 IOP Publishing Ltd.

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收藏

页码：L1382 / L1384

页数：3

相关论文

共 13 条

[1] PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE [J].

BROEKAERT, TPE ;

LEE, W ;

FONSTAD, CG .

APPLIED PHYSICS LETTERS, 1988, 53 (16) :1545-1547

[2] A RESONANT-TUNNELING BIPOLAR-TRANSISTOR (RBT) - A NEW FUNCTIONAL DEVICE WITH HIGH-CURRENT GAIN [J].

FUTATSUGI, T ;

YAMAGUCHI, Y ;

IMAMURA, K ;

MUTO, S ;

YOKOYAMA, N ;

SHIBATOMI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (02) :L131-L133

[3] LARGE ROOM-TEMPERATURE EFFECTS FROM RESONANT TUNNELING THROUGH ALAS BARRIERS [J].

GOODHUE, WD ;

SOLLNER, TCLG ;

LE, HQ ;

BROWN, ER ;

VOJAK, BA .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1086-1088

[4] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO [J].

HUANG, CI ;

PAULUS, MJ ;

BOZADA, CA ;

DUDLEY, SC ;

EVANS, KR ;

STUTZ, CE ;

JONES, RL ;

CHENEY, ME .

APPLIED PHYSICS LETTERS, 1987, 51 (02) :121-123

[5] DETERMINATION OF THE RESONANT-STATE ENERGY OF AN IN0.53GA0.47AS/ALAS PSEUDOMORPHIC RESONANT TUNNELING BARRIER GROWN BY MBE [J].

INATA, T ;

MUTO, S ;

SASA, S ;

MIYAUCHI, E .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :371-374

[6] A PSEUDOMORPHIC IN0.53GA0.47AS ALAS RESONANT TUNNELING BARRIER WITH A PEAK-TO-VALLEY CURRENT RATIO OF 14 AT ROOM-TEMPERATURE [J].

INATA, T ;

MUTO, S ;

NAKATA, Y ;

SASA, S ;

FUJII, T ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08) :L1332-L1334

[7] OBSERVATION OF A NEGATIVE DIFFERENTIAL RESISTANCE DUE TO TUNNELING THROUGH A SINGLE BARRIER INTO A QUANTUM-WELL [J].

MORKOC, H ;

CHEN, J ;

REDDY, UK ;

HENDERSON, T ;

LURYI, S .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :70-72

[8] PICOSECOND CHARACTERIZATION OF INGAAS INALAS RESONANT TUNNELING BARRIERS GROWN BY MBE [J].

MUTO, S ;

TACKEUCHI, A ;

INATA, T ;

MIYAUCHI, E ;

FUJII, T .

SURFACE SCIENCE, 1990, 228 (1-3) :370-372

[9] NEGATIVE DIFFERENTIAL RESISTANCE OF IN0.53GA0.47AS/IN0.52AL0.48AS RESONANT TUNNELING BARRIERS GROWN BY MBE [J].

MUTO, S ;

INATA, T ;

SUGIYAMA, Y ;

NAKATA, Y ;

FUJII, T ;

HIYAMIZU, S .

JOURNAL DE PHYSIQUE, 1987, 48 (C-5) :453-456

[10]

NAKATA Y, MATE RES SOC P