Fabrication, magnetic properties, and electronic structures of nanoscale zinc-blende MnAs dots (invited)

被引:126
作者
Ono, K [1 ]
Okabayashi, J
Mizuguchi, M
Oshima, M
Fujimori, A
Akinaga, H
机构
[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
[2] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
[3] Univ Tokyo, Dept Complex Sci & Engn, Bunkyo Ku, Tokyo 1130033, Japan
[4] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan
关键词
D O I
10.1063/1.1456396
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferromagnetic nanoscale zinc-blende MnAs dots were successfully fabricated on a sulfur-passivated GaAs (001) surface by molecular-beam epitaxy. Transmission electron microscopy and selected area electron diffraction showed that the crystalline structure was not the same as that of bulk MnAs with NiAs-type hexagonal crystalline structure, but of zinc-blende type. In in situ photoemission spectroscopy of the zinc-blende MnAs dots, the Fermi edge was not clearly observed and the Mn 3d partial density of states was similar to that of the diluted ferromagnetic semiconductor Ga1-xMnxAs, which also supports the fabrication of zinc-blende MnAs in the nanoscale. (C) 2002 American Institute of Physics.
引用
收藏
页码:8088 / 8092
页数:5
相关论文
共 23 条
[1]   MAGNETIC ANISOTROPY ENERGY IN NICKEL ARSENIDE TYPE CRYSTALS [J].
ADACHI, K .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (11) :2187-&
[2]   Magneto-optical properties and the potential application of GaAs with magnetic MnAs nanoclusters [J].
Akinaga, H ;
Miyanishi, S ;
Tanaka, K ;
Van Roy, W ;
Onodera, K .
APPLIED PHYSICS LETTERS, 2000, 76 (01) :97-99
[3]   Room-temperature thousandfold magnetoresistance change in MnSb granular films: Magnetoresistive switch effect [J].
Akinaga, H ;
Mizuguchi, M ;
Ono, K ;
Oshima, M .
APPLIED PHYSICS LETTERS, 2000, 76 (03) :357-359
[4]   Material design of half-metallic zinc-blende CrAs and the synthesis by molecular-beam epitaxy [J].
Akinaga, H ;
Manago, T ;
Shirai, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (11B) :L1118-L1120
[5]   Intrinsic exchange biasing in MnAs epilayers grown on (001) GaAs [J].
Chun, SH ;
Potashnik, SJ ;
Ku, KC ;
Berry, JJ ;
Schiffer, P ;
Samarth, N .
APPLIED PHYSICS LETTERS, 2001, 78 (17) :2530-2532
[6]  
DeBoeck J, 1996, APPL PHYS LETT, V68, P2744, DOI 10.1063/1.115584
[7]   Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F ;
Cibert, J ;
Ferrand, D .
SCIENCE, 2000, 287 (5455) :1019-1022
[8]   (Ga,Mn)As as a digital ferromagnetic heterostructure [J].
Kawakami, RK ;
Johnston-Halperin, E ;
Chen, LF ;
Hanson, M ;
Guébels, N ;
Speck, JS ;
Gossard, AC ;
Awschalom, AA .
APPLIED PHYSICS LETTERS, 2000, 77 (15) :2379-2381
[9]   Ferromagnetic order induced by photogenerated carriers in magnetic III-V semiconductor heterostructures of (In,Mn)As/GaSb [J].
Koshihara, S ;
Oiwa, A ;
Hirasawa, M ;
Katsumoto, S ;
Iye, Y ;
Urano, C ;
Takagi, H ;
Munekata, H .
PHYSICAL REVIEW LETTERS, 1997, 78 (24) :4617-4620
[10]   CONFIGURATION-INTERACTION DESCRIPTION OF TRANSITION-METAL IMPURITIES IN II-VI SEMICONDUCTORS [J].
MIZOKAWA, T ;
FUJIMORI, A .
PHYSICAL REVIEW B, 1993, 48 (19) :14150-14156