Accurate control of the misorientation angles in direct wafer bonding

被引：59

作者：

Fournel, F

Moriceau, H

Aspar, B

Rousseau, K

Eymery, J

Rouvière, JL

Magnea, N

机构：

[1] CEA, LETI, Dept Technol Silicium, F-38054 Grenoble 09, France

[2] CEA, Dept Rech Fondamentale, F-38054 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 05期

关键词：

D O I：

10.1063/1.1446987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A direct wafer bonding process has been developed to accurately control both the bonding interface twist and tilt angles between a monocrystalline layer and a bare monocrystalline wafer. This process is based on the bonding of twin surfaces produced by splitting a single wafer, using for instance the Smart Cut(R) process. A targeted control of +/-0.005degrees is obtained for the twist angle without any crystallographic measurement. Moreover, pure twist-bonded interfaces have been artificially made between two (001) bonded silicon surfaces. (C) 2002 American Institute of Physics.

引用

页码：793 / 795

页数：3

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