Compositional shift in AlxGa1-xN beneath annealed metal contacts

被引：6

作者：

Hull, BA

Mohney, SE ^{[1
]}

Chowdhury, U

Dupuis, RD

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 02期

关键词：

D O I：

10.1116/1.1676683

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Interfacial reactions between Ni, Pd, or Au contacts and AlxGa1-xN with compositions x = 0.15 and 0.47 were studied in this investigation. X-ray photoelectron spectroscopy and scanning transmission electron microscopy coupled with energy dispersive spectroscopy showed that reaction between these metals and AlxGa1-xN results in a pronounced shift in the AlxGa1-xN beneath the contact to an Al-enriched composition. This Al enrichment results from the preferential outdiffusion of Ga into the metal films, and this reaction is consistent with thermodynamic driving forces in these systems. Possible consequences of the observed compositional shift on the electrical properties of contacts to AlxGa1-xN are also discussed. (C) 2004 American Vacuum Society.

引用

页码：654 / 662

页数：9

共 43 条

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