Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy

被引：44

作者：

Cho, NK

Ryu, SP

Song, JD

Choi, WJ ^{[1
]}

Lee, JI

Jeon, H

机构：

[1] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 136791, South Korea

[2] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期

关键词：

D O I：

10.1063/1.2189195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We strongly support Guryanov's speculation-that a thinner wetting layer is expected with quantum dots (QDs) grown by migration-enhanced epitaxy-with structural and optical measurements. InAs QDs grown by migration-enhanced molecular-beam epitaxy showed a larger size, lower density, similar to 40% enhanced uniformity, similar to 2 times larger aspect ratio, and a measurement temperature insensitivity of the photoluminescence linewidth compared to QDs grown by conventional molecular-beam epitaxy. The thickness of the wetting layer for the migration-enhanced epitaxial InAs QD (2.1 nm) was thinner than that of the counterpart (4.0 nm). (c) 2006 American Institute of Physics.

引用

页数：3

共 18 条

[1]

[Anonymous], 1999, SEMICONDUCTORS SEMIM

[2]

Bimberg D., 1999, QUANTUM DOT HETEROST

[3] InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE [J].

Bosacchi, A ;

Frigeri, P ;

Franchi, S ;

Allegri, P ;

Avanzini, V .

JOURNAL OF CRYSTAL GROWTH, 1997, 175 :771-776

[4] Progress in quantum dot lasers: 1100 nm, 1300 nm, and high power applications [J].

Grundmann, M ;

Heinrichsdorff, F ;

Ledentsov, NN ;

Ribbat, C ;

Bimberg, D ;

Zhukov, AE ;

Kovsh, AR ;

Maximov, MV ;

Shernyakov, YM ;

Lifshits, DA ;

Ustinov, VM ;

Alferov, ZI .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (4B) :2341-2343

[5] STM and RHEED study of InAs/GaAs quantum dots obtained by submonolayer epitaxial techniques [J].

Guryanov, GM ;

Cirlin, GE ;

Petrov, VN ;

Polyakov, NK ;

Golubok, AO ;

Tipissev, SY ;

Gubanov, VB ;

Samsonenko, YB ;

Ledentsov, NN ;

Shchukin, VA ;

Grundmann, M ;

Bimberg, D ;

Alferov, ZI .

SURFACE SCIENCE, 1996, 352 :651-655

[6] High detectivity InAs quantum dot infrared photodetectors [J].

Kim, ET ;

Madhukar, A ;

Ye, ZM ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 2004, 84 (17) :3277-3279

[7] Quantum dot lasers: the birth and future trends [J].

Ledentsov, NN .

SEMICONDUCTORS, 1999, 33 (09) :946-950

[8] Adatom condensation and quantum dot sizes in InGaAs/GaAs (001) [J].

Leon, R ;

Wellman, J ;

Liao, XZ ;

Zou, J ;

Cockayne, DJH .

APPLIED PHYSICS LETTERS, 2000, 76 (12) :1558-1560

[9] Nanoscale InGaAs concave disks fabricated by heterogeneous droplet epitaxy [J].

Mano, T ;

Watanabe, K ;

Tsukamoto, S ;

Koguchi, N ;

Fujioka, H ;

Oshima, M ;

Lee, CD ;

Leem, JY ;

Lee, HJ ;

Noh, SK .

APPLIED PHYSICS LETTERS, 2000, 76 (24) :3543-3545

[10] 1.3-μm CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots [J].

Mukai, K ;

Nakata, Y ;

Otsubo, K ;

Sugawara, M ;

Yokoyama, N ;

Ishikawa, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (04) :472-478

← 1 2 →