Nanoscale InGaAs concave disks fabricated by heterogeneous droplet epitaxy

被引：60

作者：

Mano, T

Watanabe, K

Tsukamoto, S

Koguchi, N

Fujioka, H

Oshima, M

Lee, CD

Leem, JY

Lee, HJ

Noh, SK

机构：

[1] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan

[2] Univ Tokyo, Grad Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[3] Korea Res Inst Stand & Sci, Mat Evaluat Ctr, Taejon 305600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 24期

关键词：

D O I：

10.1063/1.126701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The detailed cross-sectional structure of InGaAs quantum dots fabricated by a heterogeneous droplet epitaxy method was investigated by means of cross-sectional transmission electron microscopy observation. It was confirmed that concave disks without any dislocations or wetting layer were formed at the upper part of the flat surface. This result was consistent with the change of photoluminescence intensity and peak position. The sizes of the disks were estimated to be 30 and 12 nm in lateral and vertical directions, respectively. From this estimation, the occurrence of a phase-separation effect is suggested. (C) 2000 American Institute of Physics. [S0003-6951(00)01724-1].

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页码：3543 / 3545

页数：3

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