Magneto-photoluminescence study of InGaAs quantum dots fabricated by droplet epitaxy

被引：8

作者：

Mano, T

Watanabe, K

Tsukamoto, S

Imanaka, Y

Takamasu, T

Fujioka, H

Kido, G

Oshima, M

Koguchi, N

机构：

[1] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan

[2] Univ Tokyo, Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[3] Tokyo Univ Sci, Dept Mat Sci & Technol, Noda, Chiba 2788510, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2000年 / 7卷 / 3-4期

关键词：

quantum dots; magneto-photoluminescence; InGaAs; droplet epitaxy; transmission electron microscopy;

D O I：

10.1016/S1386-9477(99)00358-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have successfully measured magneto-photoluminescence of InGaAs quantum dots (QDs) fabricated by droplet epitaxy with highly dense Ga droplets, termed separated-phase enhance epitaxy with droplets (SPEED). Ln the low magnetic field region, the PL peak energy shift increases linearly with square of the magnetic field. From the estimated Bohr radii for the QDs, it is found that the size of the QDs in the lateral direction is 2.7-times larger than that in the vertical direction. Moreover, using high magnetic region for estimating the detailed lateral size, the cyclotron radius around 25 T in the QDs becomes equal to the lateral size of the QDs. The cyclotron radius of 5.1 nm at 25 T suggests that the size of the InGaAs QDs in lateral direction might be as small as about 10 nm. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：448 / 451

页数：4

共 14 条

[1]

AKAHANE K, 46 INT S ADV PHYS FI

[2] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].