Fabrication of InGaAs quantum dots on GaAs(001) by droplet epitaxy

被引：61

作者：

Mano, T

Watanabe, K

Tsukamoto, S

Fujioka, H

Oshima, M

Koguchi, N

机构：

[1] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan

[2] Univ Tokyo, Dept Appl Chem, Sch Engn, Tokyo 1138656, Japan

[3] Sci Univ Tokyo, Dept Mat Sci & Technol, Noda, Chiba 2788510, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 2-3期

关键词：

quantum dot; InGaAs; phase separation; droplet epitaxy; photoluminescence;

D O I：

10.1016/S0022-0248(99)00606-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have proposed a new self-organized growth method for InGaAs quantum dots (QDs) using droplet epitaxy with highly dense Ga droplets. During the crystallization process of InGaAs in droplet epitaxy, the highly dense Ga droplets effectively prevented the two-dimensional growth of InGaAs. Phase-separation during annealing for the InAs-GaAs system resulted in the formation of high-quality InGaAs QDs in the upper part of the sample with a flat surface, (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：504 / 508

页数：5

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