Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy

被引：44

作者：

Cho, NK

Ryu, SP

Song, JD

Choi, WJ ^{[1
]}

Lee, JI

Jeon, H

机构：

[1] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 136791, South Korea

[2] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期

关键词：

D O I：

10.1063/1.2189195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We strongly support Guryanov's speculation-that a thinner wetting layer is expected with quantum dots (QDs) grown by migration-enhanced epitaxy-with structural and optical measurements. InAs QDs grown by migration-enhanced molecular-beam epitaxy showed a larger size, lower density, similar to 40% enhanced uniformity, similar to 2 times larger aspect ratio, and a measurement temperature insensitivity of the photoluminescence linewidth compared to QDs grown by conventional molecular-beam epitaxy. The thickness of the wetting layer for the migration-enhanced epitaxial InAs QD (2.1 nm) was thinner than that of the counterpart (4.0 nm). (c) 2006 American Institute of Physics.

引用

页数：3

共 18 条

[11] Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique [J].