1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C

被引：312

作者：

Shchekin, OB ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 18期

关键词：

D O I：

10.1063/1.1476708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on the influence of p-type modulation doping on the gain characteristics of 1.3 mum InAs quantum dot lasers. The improvement in optical gain leads to very high characteristic temperatures for the lasing threshold that reach 161 K in the temperature range between 0 and 80 degreesC. 1.3 mum ground state lasing is obtained up to a temperature of 167 degreesC. (C) 2002 American Institute of Physics.

引用

页码：3277 / 3279

页数：3

共 13 条

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