Low-threshold, continous-wave two-stack quantum-dot laser with reduced temperature sensitivity

被引：40

作者：

Shchekin, OB ^{[1
]}

Park, G ^{[1
]}

Huffaker, DL ^{[1
]}

Mo, QW ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 09期

关键词：

laser measurements; laser resonators; quantum dots; semiconductor lasers;

D O I：

10.1109/68.874208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented on continuous wave operation of two-stack quantum dot lasers designed with reduced temperature sensitivity in their threshold. The InAs quantum dots are designed to have a wide energy spacing (similar to 102 meV) between the ground and first excited radiative transitions. Selectively oxidized stripe lasers have continuous wave threshold currents as low as 1.2 mA for 2 mu m wide stripes and minimum threshold current densities of 26 A/cm(2) for 13-mu-m nide stripes. Broad area lasers have continuous wave threshold current densities as:low as 40 A/cm(2), even for p-up mounting. Ground state lasing is:obtained-up to the highest temperature measured of 326 K.

引用

页码：1120 / 1122

页数：3

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