Quantum yield of electron-beam induced decomposition of SiO2 overlay on Si in nanolithography using a scanning tunneling microscope

被引：8

作者：

Ito, T ^{[1
]}

Gotoh, M ^{[1
]}

Sudoh, K ^{[1
]}

Iwasaki, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 10期

关键词：

quantum yield; STM; electron beam; decomposition; SiO2; nanolithography;

D O I：

10.1143/JJAP.40.6055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We evaluate the quantum yield Of SiO2 decomposition caused by electron-beam irradiation from the tip apex of a scanning tunneling microscope over an electron energy range of 10-180 eV and find onsets at 40 and 120 eV. These onsets are close to those found previously for electron-beam induced SiO2 dissociation by Auger electron spectroscopy and electron stimulated desorption. Based on the excitation function, we consider that the decomposition is activated by core level excitations like the Knotek-Feibelman mechanism.

引用

页码：6055 / 6058

页数：4

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