Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide

被引：33

作者：

Huang, Jheng-Jie ^{[1
]}

Chang, Ting-Chang ^{[2
,3
]}

Yang, Jyun-Bao ^{[4
]}

Chen, Shih-Ching ^{[1
]}

Yang, Po-Chun ^{[4
]}

Chen, Yu-Ting ^{[4
]}

Tseng, Hsueh-Chih ^{[1
]}

Sze, Simon M. ^{[5
]}

Chu, Ann-Kuo ^{[4
]}

Tsai, Ming-Jinn ^{[6
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 80424, Taiwan

[5] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[6] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu 310, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 10期

关键词：

Gallium oxide; nonvolatile resistance switching memory; resistance random access memory (RRAM);

D O I：

10.1109/LED.2012.2206365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we fabricated resistance random access memory in a Pt/GaOx/TiN structure with a bipolar resistance switching characteristic and a bistable resistance ratio of about two orders by I-V sweeping. In order to increase the oxygen ion quantity in the gallium oxide layer, the proposed sample was sputtered in a mixed ambient of Ar and oxygen, and the resistance ratio was enhanced by 2.5 orders. In addition to the resistance ratio, set voltage distribution statistics show that the stability of gallium oxide sputtered in mixed Ar and oxygen gas was better than standard Ar-only sample.

引用

页码：1387 / 1389

页数：3

共 19 条

[1] Fatigue-free RuO2/Pb(Zr,Ti)O3/RuO2 capacitor prepared by metalorganic chemical vapor deposition at 395°C [J].

Asano, G ;

Morioka, H ;

Funakubo, H ;

Shibutami, T ;

Oshima, N .

APPLIED PHYSICS LETTERS, 2003, 83 (26) :5506-5508

[2] A novel approach of fabricating germanium nanocrystals for nonvolatile memory application [J].

Chang, TC ;

Yan, ST ;

Liu, PT ;

Chen, CW ;

Lin, SH ;

Sze, SM .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (01) :G17-G19

[3] Developments in nanocrystal memory [J].

Chang, Ting-Chang ;

Jian, Fu-Yen ;

Chen, Shih-Cheng ;

Tsai, Yu-Ting .

MATERIALS TODAY, 2011, 14 (12) :608-615

[4] Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films [J].

Chen, Min-Chen ;

Chang, Ting-Chang ;

Tsai, Chih-Tsung ;

Huang, Sheng-Yao ;

Chen, Shih-Ching ;

Hu, Chih-Wei ;

Sze, Simon M. ;

Tsai, Ming-Jinn .

APPLIED PHYSICS LETTERS, 2010, 96 (26)

[5] Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory [J].

Chen, Min-Chen ;

Chang, Ting-Chang ;

Huang, Sheng-Yao ;

Chen, Shih-Ching ;

Hu, Chih-Wei ;

Tsai, Chih-Tsung ;

Sze, Simon M. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (06) :II191-II193

[6] Formation of stacked Ni silicide nanocrystals for nonvolatile memory application [J].

Chen, Wei-Ren ;

Chang, Ting-Chang ;

Liu, Po-Tsun ;

Lin, Po-Sun ;

Tu, Chun-Hao ;

Chang, Chun-Yen .

APPLIED PHYSICS LETTERS, 2007, 90 (11)

[7]

Chong T. C., 2006, APPL PHYS LETT, V88

[8] Effect of top electrode materials on bipolar resistive switching behavior of gallium oxide films [J].

Gao, Xu ;

Xia, Yidong ;

Ji, Jianfeng ;

Xu, Hanni ;

Su, Yi ;

Li, Haitao ;

Yang, Chunjun ;

Guo, Hongxuan ;

Yin, Jiang ;

Liu, Zhiguo .

APPLIED PHYSICS LETTERS, 2010, 97 (19)

[9] A study of cycling induced degradation mechanisms in Si nanocrystal memory devices [J].

Jiang, Dandan ;

Zhang, Manhong ;

Huo, Zongliang ;

Wang, Qin ;

Liu, Jing ;

Yu, Zhaoan ;

Yang, Xiaonan ;

Wang, Yong ;

Zhang, Bo ;

Chen, Junning ;

Liu, Ming .

NANOTECHNOLOGY, 2011, 22 (25)

[10]

Lee H. Y., 2008, APPL PHYS LETT, V92

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