Effect of top electrode materials on bipolar resistive switching behavior of gallium oxide films

被引：61

作者：

Gao, Xu ^{[1
,2
]}

Xia, Yidong ^{[1
,3
]}

Ji, Jianfeng ^{[1
,2
]}

Xu, Hanni ^{[1
,3
]}

Su, Yi ^{[1
,3
]}

Li, Haitao ^{[1
,3
]}

Yang, Chunjun ^{[1
,3
]}

Guo, Hongxuan ^{[4
]}

Yin, Jiang ^{[1
,3
]}

Liu, Zhiguo ^{[1
,3
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[3] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China

[4] Natl Inst Mat Sci, Adv Nano Characterizat Ctr, Tsukuba, Ibaraki 3050047, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 19期

基金：

中国国家自然科学基金;

关键词：

TRANSITION;

D O I：

10.1063/1.3501967

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Well-developed bipolar resistive switching behaviors have been revealed in Pt/GaOx/ITO stacks without an electroforming process. By substituting platinum with titanium as the top electrode, switching polarity changed from "counter-Figure-8" to "Figure-8." The modulation of Schottky barrier at the Pt/GaOx interface induced by migration of oxygen vacancies was proposed to explain the switching in Pt/GaOx/ITO stacks, while the switching in Ti/GaOx/ITO stacks was ascribed to the redox reaction at the Ti/GaOx interface. Our experimental result further confirms the migration of oxygen vacancies in the vicinity of the electrode area plays an important role in the resistive switching process. (C) 2010 American Institute of Physics. [doi:10.1063/1.3501967]

引用

页数：3

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