Conduction behavior change in amorphous LaLuO3 dielectrics based on correlated barrier hopping theory

Unipolar switching behaviors have been revealed in amorphous LaLuO3, which makes it suited for not only logic but memory applications using the conventional semiconductor or the emerging nano/CMOS architectures. Such switching is comprehended with regard to the conduction behavior transition between high- and low-resistance states. The conduction in high- resistance state follows the Poole's law, whereas the conduction in low-resistance state is dominated by percolation. The transition between these resistance states is attributed to the change in the separation between oxygen vacancy sites in the light of the correlated barrier hopping theory. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3425671]