Multilevel resistive switching with ionic and metallic filaments

被引：133

作者：

Liu, Ming ^{[1
,2
]}

Abid, Z. ^{[1
,3
]}

Wang, Wei ^{[1
,3
]}

He, Xiaoli ^{[1
,3
]}

Liu, Qi ^{[1
,2
]}

Guan, Weihua ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Device Integrat, Beijing 100029, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Device Integrat, Beijing 100029, Peoples R China

[3] SUNY Albany, CNSE, Albany, NY 12203 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 23期

基金：

美国国家科学基金会;

关键词：

copper; doping; random-access storage; silicon; space-charge-limited conduction; titanium; tolerance analysis; zirconium compounds; MEMORY; RESISTANCE; FILMS;

D O I：

10.1063/1.3151822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The resistive random access memory (ReRAM) device with three distinguishable resistance states is fabricated by doping Cu into a portion of the ZrO2 oxide layer of the Ti/ZrO2/n(+)-Si structure. The temperature-dependent measurement results demonstrate that filaments due to ionic trap-controlled space charge limited current conduction and metallic bridge are formed at different voltages. The formation and rupture of these different conducting filamentary paths in parallel are suggested to be responsible for the multilevel switching with the large resistance ratio, which can be used to establish a reliable multilevel ReRAM solution with variation tolerance.

引用

页数：3

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