Silicon carbide as a material for mainstream electronics

被引:15
作者
Dimitrijev, S [1 ]
机构
[1] Griffith Univ, Sch Microelect Engn, Brisbane, Qld 4111, Australia
关键词
silicon-carbide electronics; surface passivation; mainstream electronics; low-leakage switches; complex systems;
D O I
10.1016/j.mee.2005.10.036
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
SiC is emerging as the only semiconductor material other than silicon that can have electronically passivated surface to industrial standards. The surface passivation is the main reason for the dominance of silicon technology, but SiC has favorable bulk properties. This combination of factors raises the question whether SiC can play a role in mainstream electronics (integrated-circuit based complex systems). Addressing this question in this paper, it is concluded that SiC integration with silicon wafers is the most likely trigger of an evolutionary chain of investment and development steps, which has the potential to significantly influence future development of mainstream electronics. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:123 / 125
页数:3
相关论文
共 6 条
[1]   Silicon carbide on insulator formation using the Smart Cut process [J].
DiCioccio, L ;
LeTiec, Y ;
Letertre, F ;
Jaussaud, C ;
Bruel, M .
ELECTRONICS LETTERS, 1996, 32 (12) :1144-1145
[2]  
Dimitrijev S, 2004, ADV TEXTS PHYS, P373
[3]  
JACKSON DM, 1965, T METALL SOC AIME, V223, P488
[4]   VAPOR-PHASE DEPOSITION OF BETA-SILICON CARBIDE ON SILICON SUBSTRATES [J].
KUROIWA, K ;
SUGANO, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :138-140
[5]   EPITAXIAL-GROWTH AND ELECTRIC CHARACTERISTICS OF CUBIC SIC ON SILICON [J].
NISHINO, S ;
SUHARA, H ;
ONO, H ;
MATSUNAMI, H .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) :4889-4893
[6]   INFRARED PROPERTIES OF CUBIC SILICON CARBIDE FILMS [J].
SPITZER, WG ;
KLEINMAN, DA ;
FROSCH, CJ .
PHYSICAL REVIEW, 1959, 113 (01) :133-136