Prevention of MoSi multilayer reflection loss in EUVL tools

被引:31
作者
Meiling, H [1 ]
Mertens, B [1 ]
Stietz, F [1 ]
Wedowski, M [1 ]
Klein, R [1 ]
Kurt, R [1 ]
Louis, E [1 ]
Yakshin, A [1 ]
机构
[1] ASML, NL-5503 LA Veldhoven, Netherlands
来源
SOFT X-RAY AND EUV IMAGING SYSTEMS II | 2001年 / 4506卷
关键词
EUVL; reflection loss; contamination; carbon growth; oxidation; MoSi mirrors; mirror lifetime;
D O I
10.1117/12.450949
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Extreme ultraviolet lithography requires vacuum conditions in the optical train. In order to maintain sufficient energy throughput, reflection reduction of multilayer mirrors due to contamination has to be minimised. We report on oxidation and carbonisation experiments on MoSi mirrors under exposure with EUV radiation from a synchrotron. To mimic the effects of EUV radiation we also exposed samples using an electron gun. The oxidation rate was found to be similar to0.015 nm/h per mW/mm(2) of EUV radiation under vacuum conditions that are typical for a high throughput EUVL system, i.e. 10(-6) mbar H2O. This oxidation can to a large extent be suppressed by using smart gas blend strategies during exposure, e.g. using ethanol. A deposition rate of 0.25 nm/h was found when the hydrocarbon pressure of Fomblin was reduced to 10(-9) mbar. We demonstrate that carbonisation can be suppressed by admitting oxygen during electron gun exposure.
引用
收藏
页码:93 / 104
页数:12
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