Prevention of MoSi multilayer reflection loss in EUVL tools

被引：31

作者：

Meiling, H ^{[1
]}

Mertens, B ^{[1
]}

Stietz, F ^{[1
]}

Wedowski, M ^{[1
]}

Klein, R ^{[1
]}

Kurt, R ^{[1
]}

Louis, E ^{[1
]}

Yakshin, A ^{[1
]}

机构：

[1] ASML, NL-5503 LA Veldhoven, Netherlands

来源：

SOFT X-RAY AND EUV IMAGING SYSTEMS II | 2001年 / 4506卷

关键词：

EUVL; reflection loss; contamination; carbon growth; oxidation; MoSi mirrors; mirror lifetime;

D O I：

10.1117/12.450949

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Extreme ultraviolet lithography requires vacuum conditions in the optical train. In order to maintain sufficient energy throughput, reflection reduction of multilayer mirrors due to contamination has to be minimised. We report on oxidation and carbonisation experiments on MoSi mirrors under exposure with EUV radiation from a synchrotron. To mimic the effects of EUV radiation we also exposed samples using an electron gun. The oxidation rate was found to be similar to0.015 nm/h per mW/mm(2) of EUV radiation under vacuum conditions that are typical for a high throughput EUVL system, i.e. 10(-6) mbar H2O. This oxidation can to a large extent be suppressed by using smart gas blend strategies during exposure, e.g. using ethanol. A deposition rate of 0.25 nm/h was found when the hydrocarbon pressure of Fomblin was reduced to 10(-9) mbar. We demonstrate that carbonisation can be suppressed by admitting oxygen during electron gun exposure.

引用

页码：93 / 104

页数：12

共 26 条

[1] EUCLIDES: First phase completed!
Benschop, JPH
Dinger, U
Ockwell, DC
[J]. EMERGING LITHOGRAPHIC TECHNOLOGIES IV, 2000, 3997 : 34 - 47
[2] EUCLIDES, the European EUVL program
Benschop, JPH
Kaiser, WM
Ockwell, DC
[J]. EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2, 1999, 3676 : 246 - 252
[3] INVESTIGATION OF CARBON CONTAMINATION OF MIRROR SURFACES EXPOSED TO SYNCHROTRON RADIATION
BOLLER, K
HAELBICH, RP
HOGREFE, H
JARK, W
KUNZ, C
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 208 (1-3): : 273 - 279
[4] BOYD IW, 1993, JPN J APPL PHYS 1, V32, P6141, DOI 10.1143/JJAP.32.6141
[5] AES STUDY OF THE LOW-PRESSURE OXIDATION OF SI(100) - ELECTRON-BEAM EFFECTS
CARRIERE, B
CHOUIYAKH, A
LANG, B
[J]. SURFACE SCIENCE, 1983, 126 (1-3) : 495 - 501
[6] ELECTRON-BEAM ASSISTED ADSORPTION ON SI(111) SURFACE
COAD, JP
BISHOP, HE
RIVIERE, JC
[J]. SURFACE SCIENCE, 1970, 21 (02) : 253 - &
[7] ENGEL T, 1993, SURF SCI REP, V18, P91, DOI 10.1016/0167-5729(93)90016-I
[8] DISSOCIATIVE CHEMISORPTION OF H2O ON SI(100) AND SI(111) - A VIBRATIONAL STUDY
IBACH, H
WAGNER, H
BRUCHMANN, D
[J]. SOLID STATE COMMUNICATIONS, 1982, 42 (06) : 457 - 459
[9] JONKER J, COMMUNICATION
[10] ELECTRON-BEAM INDUCED EFFECTS ON GAS ADSORPTION UTILIZING AUGER-ELECTRON SPECTROSCOPY - CO AND O2 ON SI .2. STRUCTURAL EFFECTS
KIRBY, RE
DIEBALL, JW
[J]. SURFACE SCIENCE, 1974, 41 (02) : 467 - 474

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