Structure and defects of vapor-phase-grown diamond nanocrystals

被引：43

作者：

Jiang, X

Jia, CL

机构：

[1] Fraunhofer Inst Schicht & Oberflachentech, D-38108 Braunschweig, Germany

[2] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 13期

关键词：

D O I：

10.1063/1.1458071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond nanocrystalline films are prepared by the ion bombardment-assisted gas vapor synthesis technique. The phase quality, morphology and microstructure of the films are investigated by means of Raman spectroscopy, scanning electron microscopy, and high-resolution transmission electron microscopy. The grain size in the film ranges from several nanometers to several tens of nanometers. There is a high density of lattice defects, mainly stacking faults and twin boundaries in the nanocrystals. Lattice distortions, vacancies, and dislocations are observed. The growth of nanocrystals and the mechanism of defect formation are discussed in light of the ion impact effect. (C) 2002 American Institute of Physics.

引用

页码：2269 / 2271

页数：3

共 17 条

[1] Effect of nitrogen addition on the microstructure and mechanical properties of diamond films grown using high-methane concentrations [J].