Direct local epitaxy of diamond on Si(100) and surface-roughening-induced crystal misorientation

被引：35

作者：

Jiang, X

Jia, CL

机构：

[1] Fraunhofer Inst Schicht & Oberflachentech, D-38108 Braunschweig, Germany

[2] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.84.3658

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A direct diamond epitaxy on the silicon substrate is demonstrated not only at the interface formed during the growth process but also at the nucleation sites. The small (001) terraces with dimensions of several atomic distances at the site of nucleation are formed due to the roughening of silicon surface and lead to the grain misorientation. A model is presented which attempts to explain the initial stages of diamond growth. Predictions are made for methods of improving the: nucleation of epitaxial diamond crystallites.

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页码：3658 / 3661

页数：4

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