1.5μm wavelength DBR lasers consisting of 3λ/4-semiconductor and 3λ/4-groove buried with benzocyclobutene

被引：26

作者：

Raj, MM ^{[1
]}

Wiedmann, J ^{[1
]}

Saka, Y ^{[1
]}

Yasumoto, H ^{[1
]}

Arai, S ^{[1
]}

机构：

[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 16期

关键词：

D O I：

10.1049/el:19990907

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1.5 mu m wavelength GaInAsP/InP lasers with high reflectivity deeply etched DBR have been realised. Benzocyclobutene (BCB) polymer was buried in DBR grooves thus reducing the diffraction loss compared to that, obtained using air/semiconductor grooves. The reflectivity was estimated to be 90% from the measurement of the threshold current dependence on the cavity length and the output power ratio from the front to the rear facets.

引用

页码：1335 / 1337

页数：3

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