Short-cavity edge-emitting lasers with deeply etched distributed Bragg mirrors

被引：23

作者：

Höfling, E ^{[1
]}

Werner, R ^{[1
]}

Schäfer, F ^{[1
]}

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 02期

关键词：

D O I：

10.1049/el:19990133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Short-cavity edge-emitting lasers with deeply etched distributed Brace reflectors (DBRs) of third and second order were realised by reactive ion etching on GaInAs/AlGaAs layer structures. Diffraction limited reflectivities were achieved for third order dry etched DBR mirrors. Devices with DBRs on both cavity ends allow lasing operation for cavity lengths as short as 40 mu m.

引用

页码：154 / 155

页数：2

共 9 条

[1] THEORY OF GAIN, MODULATION RESPONSE, AND SPECTRAL LINEWIDTH IN ALGAAS QUANTUM WELL LASERS [J].

ARAKAWA, Y ;

YARIV, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (10) :1666-1674

[2] A novel short-cavity laser with deep-grating distributed Bragg reflectors [J].

Baba, T ;

Hamasaki, M ;

Watanabe, N ;

Kaewplung, P ;

Matsutani, A ;

Mukaihara, T ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1390-1394

[3] Design studies for distributed Bragg reflectors for short-cavity edge-emitting lasers [J].

Jambunathan, R ;

Singh, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (07) :1180-1189

[4] GAINAS/GAAS QUANTUM-WIRE LASER STRUCTURES WITH STRONG GAIN COUPLING DEFINED BY REACTIVE ION ETCHING [J].

ORTH, A ;

ZULL, H ;

REITHMAIER, JP ;

FORCHEL, A .

ELECTRONICS LETTERS, 1995, 31 (06) :457-458

[5] High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers [J].

Schafer, F ;

Mayer, B ;

Reithmaier, JP ;

Forchel, A .

APPLIED PHYSICS LETTERS, 1998, 73 (20) :2863-2865

[6] LOW-THRESHOLD CURRENT-DENSITY OPERATION OF GAINASP-INP LASER WITH MULTIPLE REFLECTOR MICROCAVITIES [J].

SHIN, KC ;

TAMURA, M ;

KASUKAWA, A ;

SERIZAWA, N ;

KURIHASHI, S ;

TAMURA, S ;

ARAI, S .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (10) :1119-1121

[7] Dry etching of horizontal distributed Bragg reflector mirrors for waveguide lasers [J].

Thomas, S ;

Pang, SW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :4119-4123

[8] Edge-emitting lasers with short-period semiconductor air distributed Bragg reflector mirrors [J].

Yuan, Y ;

Brock, T ;

Bhattacharya, P ;

Caneau, C ;

Bhat, R .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (07) :881-883

[9] 0.98 mu m multiquantum well tunnelling injection lasers with ultra-high modulation bandwidths [J].

Zhang, X ;

GutierrezAitken, AL ;

Klotzkin, D ;

Bhattacharya, P ;

Caneau, C ;

Bhat, R .

ELECTRONICS LETTERS, 1996, 32 (18) :1715-1717

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