0.98 mu m multiquantum well tunnelling injection lasers with ultra-high modulation bandwidths

被引：6

作者：

Zhang, X

GutierrezAitken, AL

Klotzkin, D

Bhattacharya, P

Caneau, C

Bhat, R

机构：

[1] Solid State Elctronics Laboratory, Department of Electrical Engineering, University of Michigan, Ann Arbor

[2] Bellcore, Redbank

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 18期

关键词：

semiconductor quantum wells; semiconductor junction lasers;

D O I：

10.1049/el:19961156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs-based 0.98 mu m multiquantum well tunnelling injection lasers grown by MOVPE have been designed and fabricated. 200 mu m long singlemode ridge lasers are characterised by I-th = 3mA, f(-3dB) = 45GHz, f(-3dB) (measured) = 43GHz, * and f(-3dB(max)) = 84GHz for pulsed operation. For CW operation the corresponding modulation bandwidths are 43 and 76GHz, respectively.

引用

页码：1715 / 1717

页数：3

共 7 条

[1] EFFECT OF NONLINEAR GAIN ON MODULATION DYNAMICS IN QUANTUM-WELL LASERS [J].