A COLD INP-BASED TUNNELING INJECTION-LASER WITH GREATLY REDUCED AUGER RECOMBINATION AND TEMPERATURE-DEPENDENCE

被引:18
作者
YOON, H
GUTIERREZAITKEN, AL
JAMBUNATHAN, R
SINGH, J
BHATTACHARYA, PK
机构
[1] Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Arbor
关键词
D O I
10.1109/68.414673
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have measured the Auger recombination rates in an InP-based quantum well tunneling injection laser from large signal modulation experiments, Measured values of the Anger coefficient, C-a = 1.2 +/- 0.6 x 10(-29) cm(6)s(-1) at 283 K, are a factor of over 10(2) smaller than those measured in similar multiple quantum well separate confinement heterostructure lasers, In effect, the tunneling injection mechanism keeps the carriers ''cold'' even at high injection levels, A maximum value of T-o = 70 K is measured in the tunneling injection laser compared to 50 K for conventional quantum well structures.
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页码:974 / 976
页数:3
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