DYNAMIC LINEWIDTH OF TUNNELING INJECTION-LASER

被引：9

作者：

YOON, H

SUN, HC

BHATTACHARYA, PK

机构：

[1] Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 20期

关键词：

SEMICONDUCTOR JUNCTION LASERS; LASER LINEWIDTH; CHIRP;

D O I：

10.1049/el:19941144

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dynamic linewidth of the recently demonstrated tunnelling injection-laser is investigated. A significantly smaller dynamic linewidth is measured for this laser in comparison to the separate confinement heterostructure laser. A lower gain compression coefficient for this laser, deduced from measurements of the linewidth enhancement factor and the photon lifetime, is mainly responsible for reducing its dynamic linewidth, owing to the suppression of hot carrier effects by the tunnelling injection mechanism.

引用

页码：1675 / 1677

页数：3

共 8 条

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[2] SMALL-SIGNAL MODULATION AND TEMPERATURE-DEPENDENCE OF THE TUNNELING INJECTION-LASER
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[7] TRANSIENT CHIRPING IN SINGLE-FREQUENCY LASERS - LIGHTWAVE SYSTEMS CONSEQUENCES
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[J]. ELECTRONICS LETTERS, 1984, 20 (11) : 472 - 474
[8] PROPERTIES OF A TUNNELING INJECTION QUANTUM-WELL LASER - RECIPE FOR A COLD DEVICE WITH A LARGE MODULATION BANDWIDTH
SUN, HC
DAVIS, L
SETHI, S
SINGH, J
BHATTACHARYA, P
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (08) : 870 - 872

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