The dependence of stress in IBAD films on the ion-irradiation energy and flux

被引:12
作者
Schweitz, KO
Arndt, J
Bottiger, J
Chevallier, J
机构
[1] Institute of Physics and Astronomy, University of Aarhus
关键词
D O I
10.1016/S0168-583X(97)00011-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Systematic experimental studies of the stress build-up during e-gun deposition of Ni with simultaneous bombardment by energetic Ar+ ions (IBAD) have been carried out. The ion energy E was varied from 60 to 800 eV, and the ratio of the arrival rates of Ni atoms and Ar+ ions, R/J, was varied from 0.5 to 6.4. The Ni-deposition rate was in the range from 0.5 to 2.0 Angstrom/s, with all the depositions carried out near room temperature in a chamber with the base pressure of 5 x 10(-6) Pa. The film stress was measured by use of profilometry and the application of Stoney's equation. The experimental results were compared with predictions of a simple model proposed by Davis. This model assumes that the compressive stress build-up, due to knock-on implantation of film atoms being proportional to E-1/2, is balanced by relaxation by collision-cascade-excited atom migration proportional to E-5/3. TO Obtain agreement between model and experiment in the investigated ranges of E and R/J, an additional model parameter had to be added which takes into account that without irradiation, tensile stresses arise.
引用
收藏
页码:809 / 812
页数:4
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