Growth of completely (110)-oriented Pt film on Si (100) by using MgO as a buffer by pulsed laser deposition

被引：8

作者：

Chen, XY ^{[1
]}

Yang, B

Zhu, T

Wong, KH

Liu, JM

Liu, ZG

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct Phys, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China

[3] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2002年 / 74卷 / 04期

关键词：

D O I：

10.1007/s003390100904

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(110)-textured MgO films were grown on Si (100) with etching and without etching by pulsed laser deposition. The deposited MgO films were shown to be droplets-free. The MgO film was used as a buffer layer to further grow Pt film on Si (100). A completely (110)-oriented Pt film was obtained on such a buffer layer and its surface is very smooth with a roughness of about 7.5 nm over 5 x 5 mum. This can be used as a new oriented Pt electrode on silicon for devices.

引用

页码：567 / 569

页数：3

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