Optimum growth parameters for type-II infrared lasers

被引：41

作者：

Yang, MJ ^{[1
]}

Moore, WJ ^{[1
]}

Bennett, BR ^{[1
]}

Shanabrook, BV ^{[1
]}

Cross, JO ^{[1
]}

Bewley, WW ^{[1
]}

Felix, CL ^{[1
]}

Vurgaftman, I ^{[1
]}

Meyer, JR ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 04期

关键词：

D O I：

10.1063/1.370971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface, structural, and optical properties of InAs/InGaSb/AlSb mid-infrared lasers grown by molecular beam epitaxy have been systematically studied, respectively, by Nomarski differential interference contrast, high-resolution x-ray diffraction, and variable-temperature photoluminescence. It is found that the optimum growth temperature is between 400 and 450 degrees C, based on the calibrated transmission thermometry. In addition, the impact of interfacial bond type and Sb sources has been investigated. A 5.91 mu m laser, grown with the optimal growth parameters, exhibits a maximum cw operating temperature of 210 K. (C) 1999 American Institute of Physics. [S0021-8979(99)08716-2].

引用

收藏

页码：1796 / 1799

页数：4

相关论文

共 17 条

[1]

BARVOSACARTER W, UNPUB

[2] High-temperature continuous-wave 3-6.1 μm "W'' lasers with diamond-pressure-bond heat sinking [J].

Bewley, WW ;

Felix, CL ;

Vurgaftman, I ;

Stokes, DW ;

Aifer, EH ;

Olafsen, LJ ;

Meyer, JR ;

Yang, MJ ;

Shanabrook, BV ;

Lee, H ;

Martinelli, RU ;

Sugg, AR .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1075-1077

[3] Above-room-temperature optically pumped midinfrared W lasers [J].

Bewley, WW ;

Felix, CL ;

Aifer, EH ;

Vurgaftman, I ;

Olafsen, LJ ;

Meyer, JR ;

Lee, H ;

Martinelli, RU ;

Connolly, JC ;

Sugg, AR ;

Olsen, GH ;

Yang, MJ ;

Bennett, BR ;

Shanabrook, BV .

APPLIED PHYSICS LETTERS, 1998, 73 (26) :3833-3835

[4] IMPROVED CHARGE CONTROL AND FREQUENCY PERFORMANCE IN INAS/ALSB-BASED HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].

BOLOGNESI, CR ;

CAINE, EJ ;

KROEMER, H .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (01) :16-18

[5] AlSb/InAs HEMT's for low-voltage, high-speed applications [J].

Boos, JB ;

Kruppa, W ;

Bennett, BR ;

Park, D ;

Kirchoefer, SW ;

Bass, R ;

Dietrich, HB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (09) :1869-1875

[6] 0.1μm AlSb/InAs HEMTs with InAs subchannel [J].

Boos, JB ;

Yang, MJ ;

Bennett, BR ;

Park, D ;

Kruppa, W ;

Yang, CH ;

Bass, R .

ELECTRONICS LETTERS, 1998, 34 (15) :1525-1526

[7] TYPE-II QUANTUM-WELL LASERS FOR THE MIDWAVELENGTH INFRARED [J].

MEYER, JR ;

HOFFMAN, CA ;

BARTOLI, FJ ;

RAMMOHAN, LR .

APPLIED PHYSICS LETTERS, 1995, 67 (06) :757-759

[8]

MILES RH, 1995, 7 INT C NARR GAP SEM, P31

[9] PROPOSAL FOR STRAINED TYPE-II SUPERLATTICE INFRARED DETECTORS [J].

SMITH, DL ;

MAILHIOT, C .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2545-2548

[10] NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE BASED ON RESONANT INTERBAND TUNNELING [J].

SODERSTROM, JR ;

CHOW, DH ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1989, 55 (11) :1094-1096