25th Anniversary Article: Key Points for High-Mobility Organic Field-Effect Transistors

被引：708

作者：

Dong, Huanli ^{[1
,2
]}

Fu, Xiaolong ^{[1
,3
]}

Liu, Jie ^{[1
,3
]}

Wang, Zongrui ^{[1
,3
]}

Hu, Wenping ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

[2] Capital Normal Univ, Dept Chem, Beijing 100037, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100039, Peoples R China

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 43期

基金：

中国国家自然科学基金;

关键词：

THIN-FILM TRANSISTORS; HIGH-PERFORMANCE; CHARGE-TRANSPORT; SINGLE-CRYSTALLINE; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); ELECTRONIC-PROPERTIES; MOLECULAR PACKING; FUNCTIONALIZED PENTACENE; SEMICONDUCTING POLYMERS; ISOMERICALLY PURE;

D O I：

10.1002/adma.201302514

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Remarkable progress has been made in developing high performance organic field-effect transistors (OFETs) and the mobility of OFETs has been approaching the values of polycrystalline silicon, meeting the requirements of various electronic applications from electronic papers to integrated circuits. In this review, the key points for development of high mobility OFETs are highlighted from aspects of molecular engineering, process engineering and interface engineering. The importance of other factors, such as impurities and testing conditions is also addressed. Finally, the current challenges in this field for practical applications of OFETs are further discussed.

引用

页码：6158 / 6182

页数：25

共 201 条

[1] NATURE OF IMPURITIES IN PI-CONJUGATED POLYMERS PREPARED BY FERRIC-CHLORIDE AND THEIR EFFECT ON THE ELECTRICAL-PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES [J].