Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface

We utilize very sensitive magnetic resonance measurements to observe changes in the densities of interface trap centers hundreds of hours after irradiation. Our observations provide direct atomic-scale evidence for slow changes in Si/SiO2 interface-state density distributions which appear after the devices have been damaged. Our observations also explain (at least in part) why different groups report somewhat different shapes for the density of interface states in the silicon band gap. (C) 2001 American Institute of Physics.